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| MITSUBISHI SEMICONDUCTOR MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit: millimeters (inches) 24+/-0.3 R1.25 (1) 0.6+/-0.15 R1.2 Class A operation Internally matched to 50(ohm) system High output power 17.4+/-0.3 2MIN 8.0+/-0.2 FEATURES (2) High power gain GLP = 9 dB (TYP.) @ f=6.4~7.2GHz High power added efficiency 2MIN P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=30dBm S.C.L. Thermal Resistance Rth(ch-c)=- deg.C/W(TYP.) (3) 20.4+/-0.2 13.4 APPLICATION item 01 : 6.4~7.2 GHz band power amplifier item 51 : 6.4~7.2 GHz band digital radio communication 4.0+/-0.4 1.4 QUALITY GRADE IG (1):GATE (2):SOURCE(FLANGE) (3):DRAIN GF-18 RECOMMENDED BIAS CONDITIONS VDS = 10 V ID = 3.4 A RG= 50 ohm Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation *1 Channel temperature Storage temperature (Ta=25 deg.C) Ratings -15 -15 12 -30 63 53.6 175 -65 ~ +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25 deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage (Ta=25 deg.C) Test conditions VDS=3V, VGS=0V VDS=3V, ID=3A VDS=3V, ID=30mA Limits Min. 40 VDS=10V, ID(RF off)=3.4A, f=6.4~7.2GHz 8 Typ. 3 41 9 32 -45 2.2 Max. 12 -5 2.8 Unit A S V dBm dB A % dBc deg.C/W Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 Delta Vf method -42 - *1 : item -51, 2 tone test, Po=30dBm Single Carrier Level, f=7.2GHz, Delta f=10MHz *2 : Channel to case MITSUBISHI ELECTRIC 0.1 2.4+/-0.2 Oct-03 15.8 P1dB = 12W (TYP.) @ f=6.4~7.2GHz MITSUBISHI SEMICONDUCTOR MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC |
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